| PART |
Description |
Maker |
| BLF647PS-15 BLF647PS |
Broadband power LDMOS transistor
|
NXP Semiconductors
|
| BLF645 BLF645-15 |
Broadband power LDMOS transistor
|
NXP Semiconductors
|
| BLF640 |
Broadband power LDMOS transistor
|
NXP Semiconductors
|
| BLP10H605 |
Broadband LDMOS driver transistor
|
NXP Semiconductors
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLS7G2325L-105 BLS7G2325L-105-15 |
Power LDMOS transistor BLS7G2325L-105<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| 0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦，28V的，1 GHz的LDMOS的场效应
60 Watt / 28V / 1 Ghz LDMOS FET
60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 100B4R7CP500X 100B100JCA500X MW4IC001NR4 CRCW12062 |
RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
|
飞思卡尔半导体(中国)有限公司
|
